SI3588DV-T1-GE3
SI3588DV-T1-GE3
Onderdeel nummer:
SI3588DV-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N/P-CH 20V 2.5A 6-TSOP
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
47423 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SI3588DV-T1-GE3.pdf

Invoering

We can supply SI3588DV-T1-GE3, use the request quote form to request SI3588DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3588DV-T1-GE3.The price and lead time for SI3588DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3588DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-SI3588DV-T1-GE3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:450mV @ 250µA (Min)
Leverancier Device Pakket:6-TSOP
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:80 mOhm @ 3A, 4.5V
Vermogen - Max:830mW, 83mW
Packaging:Original-Reel®
Verpakking / doos:SOT-23-6 Thin, TSOT-23-6
Andere namen:SI3588DV-T1-GE3DKR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:Mosfet Array N and P-Channel 20V 2.5A, 570mA 830mW, 83mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:2.5A, 570mA
Base Part Number:SI3588
Email:[email protected]

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