SI3812DV-T1-GE3
SI3812DV-T1-GE3
Onderdeel nummer:
SI3812DV-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 20V 2A 6-TSOP
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
46321 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SI3812DV-T1-GE3.pdf

Invoering

We can supply SI3812DV-T1-GE3, use the request quote form to request SI3812DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3812DV-T1-GE3.The price and lead time for SI3812DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3812DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-SI3812DV-T1-GE3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:600mV @ 250µA (Min)
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:6-TSOP
Serie:LITTLE FOOT®
Rds On (Max) @ Id, VGS:125 mOhm @ 2.4A, 4.5V
Vermogensverlies (Max):830mW (Ta)
Packaging:Tape & Reel (TR)
Verpakking / doos:SOT-23-6 Thin, TSOT-23-6
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
FET Type:N-Channel
FET Feature:Schottky Diode (Isolated)
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):2.5V, 4.5V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:N-Channel 20V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:2A (Ta)
Email:[email protected]

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