Intern onderdeelnummer | RO-SI3529DV-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 3V @ 250µA |
Leverancier Device Pakket: | 6-TSOP |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 125 mOhm @ 2.2A, 10V |
Vermogen - Max: | 1.4W |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | SOT-23-6 Thin, TSOT-23-6 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 205pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 2.5A, 1.95A |
Email: | [email protected] |