SI3588DV-T1-GE3
SI3588DV-T1-GE3
Nomor bagian:
SI3588DV-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N/P-CH 20V 2.5A 6-TSOP
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
47423 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SI3588DV-T1-GE3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SI3588DV-T1-GE3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:450mV @ 250µA (Min)
Paket Perangkat pemasok:6-TSOP
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:80 mOhm @ 3A, 4.5V
Listrik - Max:830mW, 83mW
Pengemasan:Original-Reel®
Paket / Case:SOT-23-6 Thin, TSOT-23-6
Nama lain:SI3588DV-T1-GE3DKR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:-
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
FET Jenis:N and P-Channel
Fitur FET:Logic Level Gate
Tiriskan untuk Sumber Tegangan (Vdss):20V
Detil Deskripsi:Mosfet Array N and P-Channel 20V 2.5A, 570mA 830mW, 83mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:2.5A, 570mA
Nomor Bagian Dasar:SI3588
Email:[email protected]

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