SI3588DV-T1-GE3
SI3588DV-T1-GE3
型號:
SI3588DV-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N/P-CH 20V 2.5A 6-TSOP
RoHS狀態:
無鉛/符合RoHS
庫存數量:
47423 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI3588DV-T1-GE3.pdf

簡單介紹

We can supply SI3588DV-T1-GE3, use the request quote form to request SI3588DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3588DV-T1-GE3.The price and lead time for SI3588DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3588DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI3588DV-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:450mV @ 250µA (Min)
供應商設備封裝:6-TSOP
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:80 mOhm @ 3A, 4.5V
功率 - 最大:830mW, 83mW
封装:Original-Reel®
封裝/箱體:SOT-23-6 Thin, TSOT-23-6
其他名稱:SI3588DV-T1-GE3DKR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:-
柵極電荷(Qg)(Max)@ Vgs:7.5nC @ 4.5V
FET型:N and P-Channel
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):20V
詳細說明:Mosfet Array N and P-Channel 20V 2.5A, 570mA 830mW, 83mW Surface Mount 6-TSOP
電流 - 25°C連續排水(Id):2.5A, 570mA
基礎部件號:SI3588
Email:[email protected]

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