APTM60A11FT1G
型號:
APTM60A11FT1G
製造商:
Microsemi
描述:
MOSFET 2N-CH 600V 40A SP1
RoHS狀態:
無鉛/符合RoHS
庫存數量:
50394 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
1.APTM60A11FT1G.pdf2.APTM60A11FT1G.pdf

簡單介紹

We can supply APTM60A11FT1G, use the request quote form to request APTM60A11FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM60A11FT1G.The price and lead time for APTM60A11FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM60A11FT1G.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-APTM60A11FT1G
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:5V @ 2.5mA
供應商設備封裝:SP1
系列:-
RDS(ON)(最大值)@標識,柵極電壓:132 mOhm @ 33A, 10V
功率 - 最大:390W
封装:Bulk
封裝/箱體:SP1
其他名稱:APTM60A11UT1G
APTM60A11UT1G-ND
工作溫度:-40°C ~ 150°C (TJ)
安裝類型:Chassis Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:32 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:10552pF @ 25V
柵極電荷(Qg)(Max)@ Vgs:330nC @ 10V
FET型:2 N-Channel (Half Bridge)
FET特點:Standard
漏極至源極電壓(Vdss):600V
詳細說明:Mosfet Array 2 N-Channel (Half Bridge) 600V 40A 390W Chassis Mount SP1
電流 - 25°C連續排水(Id):40A
Email:[email protected]

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