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首  頁 > 產品展示 > 分立半導體產品 > 晶體管 - FET，MOSFET - 陣列 > APTM60H23FT1G
APTM60H23FT1G
型號:
APTM60H23FT1G
製造商:
Microsemi
描述:
MOSFET 4N-CH 600V 20A SP1
RoHS狀態:
無鉛/符合RoHS
庫存數量:
77890 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
1.APTM60H23FT1G.pdf2.APTM60H23FT1G.pdf
在線詢價

簡單介紹

We can supply APTM60H23FT1G, use the request quote form to request APTM60H23FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM60H23FT1G.The price and lead time for APTM60H23FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM60H23FT1G.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-APTM60H23FT1G
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS（TH）（最大）@標識:5V @ 1mA
供應商設備封裝:SP1
系列:-
RDS（ON）（最大值）@標識，柵極電壓:276 mOhm @ 17A, 10V
功率 - 最大:208W
封装:Bulk
封裝/箱體:SP1
其他名稱:APTM60H23UT1G
APTM60H23UT1G-ND
工作溫度:-40°C ~ 150°C (TJ)
安裝類型:Chassis Mount
濕度敏感度等級（MSL）:1 (Unlimited)
製造商標準交貨期:32 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容（Ciss）（Max）@ Vds:5316pF @ 25V
柵極電荷（Qg）（Max）@ Vgs:165nC @ 10V
FET型:4 N-Channel (H-Bridge)
FET特點:Standard
漏極至源極電壓（Vdss）:600V
詳細說明:Mosfet Array 4 N-Channel (H-Bridge) 600V 20A 208W Chassis Mount SP1
電流 - 25°C連續排水（Id）:20A
Email:[email protected]

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