APTMC120AM08CD3AG
APTMC120AM08CD3AG
型號:
APTMC120AM08CD3AG
製造商:
Microsemi
描述:
MOSFET 2N-CH 1200V 250A D3
RoHS狀態:
無鉛/符合RoHS
庫存數量:
77681 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
APTMC120AM08CD3AG.pdf

簡單介紹

We can supply APTMC120AM08CD3AG, use the request quote form to request APTMC120AM08CD3AG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTMC120AM08CD3AG.The price and lead time for APTMC120AM08CD3AG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTMC120AM08CD3AG.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-APTMC120AM08CD3AG
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:2.2V @ 10mA (Typ)
供應商設備封裝:D3
系列:-
RDS(ON)(最大值)@標識,柵極電壓:10 mOhm @ 200A, 20V
功率 - 最大:1100W
封装:Bulk
封裝/箱體:D-3 Module
工作溫度:-40°C ~ 150°C (TJ)
安裝類型:Chassis Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:32 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:9500pF @ 1000V
柵極電荷(Qg)(Max)@ Vgs:490nC @ 20V
FET型:2 N-Channel (Half Bridge)
FET特點:Silicon Carbide (SiC)
漏極至源極電壓(Vdss):1200V (1.2kV)
詳細說明:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 250A (Tc) 1100W Chassis Mount D3
電流 - 25°C連續排水(Id):250A (Tc)
Email:[email protected]

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