APTM60A11FT1G
Artikelnummer:
APTM60A11FT1G
Hersteller:
Microsemi
Beschreibung:
MOSFET 2N-CH 600V 40A SP1
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
50394 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.APTM60A11FT1G.pdf2.APTM60A11FT1G.pdf

Einführung

We can supply APTM60A11FT1G, use the request quote form to request APTM60A11FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM60A11FT1G.The price and lead time for APTM60A11FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM60A11FT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-APTM60A11FT1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 2.5mA
Supplier Device-Gehäuse:SP1
Serie:-
Rds On (Max) @ Id, Vgs:132 mOhm @ 33A, 10V
Leistung - max:390W
Verpackung:Bulk
Verpackung / Gehäuse:SP1
Andere Namen:APTM60A11UT1G
APTM60A11UT1G-ND
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:10552pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:330nC @ 10V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 600V 40A 390W Chassis Mount SP1
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:40A
Email:[email protected]

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