EPC2105ENG
EPC2105ENG
Artikelnummer:
EPC2105ENG
Tillverkare:
EPC
Beskrivning:
TRANS GAN 2N-CH 80V BUMPED DIE
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
83165 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
EPC2105ENG.pdf

Introduktion

We can supply EPC2105ENG, use the request quote form to request EPC2105ENG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2105ENG.The price and lead time for EPC2105ENG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2105ENG.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-EPC2105ENG
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:2.5V @ 2.5mA
Leverantörs Device Package:Die
Serier:eGaN®
Rds On (Max) @ Id, Vgs:14.5 mOhm @ 20A, 5V
Effekt - Max:-
Förpackning:Bulk
Förpackning / Fodral:Die
Andra namn:EPC2105ENGR
917-EPC2105ENG
EPC2105ENGR
EPC2105ENGRH4
Driftstemperatur:-40°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:300pF @ 40V
Gate Laddning (Qg) (Max) @ Vgs:2.5nC @ 5V
FET-typ:2 N-Channel (Half Bridge)
FET-funktionen:GaNFET (Gallium Nitride)
Avlopp till källspänning (Vdss):80V
detaljerad beskrivning:Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:9.5A, 38A
Email:[email protected]

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