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Rumah > Produk > Produk Semikonduktor Diskrit > Transistor - FET, MOSFET - Array > EPC2105ENG
EPC2105ENG
EPC2105ENG
Nomor bagian:
EPC2105ENG
Pabrikan:
EPC
Deskripsi:
TRANS GAN 2N-CH 80V BUMPED DIE
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
83165 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
EPC2105ENG.pdf
Penyelidikan

pengantar

We can supply EPC2105ENG, use the request quote form to request EPC2105ENG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2105ENG.The price and lead time for EPC2105ENG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2105ENG.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Nomor Bagian Internal RO-EPC2105ENG
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:2.5V @ 2.5mA
Paket Perangkat pemasok:Die
Seri:eGaN®
Rds Pada (Max) @ Id, Vgs:14.5 mOhm @ 20A, 5V
Listrik - Max:-
Pengemasan:Bulk
Paket / Case:Die
Nama lain:EPC2105ENGR
917-EPC2105ENG
EPC2105ENGR
EPC2105ENGRH4
Suhu Operasional:-40°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 5V
FET Jenis:2 N-Channel (Half Bridge)
Fitur FET:GaNFET (Gallium Nitride)
Tiriskan untuk Sumber Tegangan (Vdss):80V
Detil Deskripsi:Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
Current - Continuous Drain (Id) @ 25 ° C:9.5A, 38A
Email:[email protected]

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