EPC2101ENG
EPC2101ENG
Part Number:
EPC2101ENG
Manufacturer:
EPC
Description:
TRANS GAN 2N-CH 60V BUMPED DIE
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
84614 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
EPC2101ENG.pdf

Introduction

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Specifications

Internal Part Number RO-EPC2101ENG
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:2.5V @ 2mA
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:11.5 mOhm @ 20A, 5V
Power - Max:-
Packaging:Tray
Package / Case:Die
Other Names:917-EPC2101ENG
EPC2101ENGR_H5
EPC2101ENGRH5
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:2.7nC @ 5V
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):60V
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
Email:[email protected]

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