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EPC2100ENGRT
- Part Number:
- EPC2100ENGRT
- Manufacturer:
- EPC
- Description:
- MOSFET 2 N-CH 30V 9.5A/38A DIE
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 52756 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- EPC2100ENGRT.pdf
Introduction
Specifications
| Internal Part Number | RO-EPC2100ENGRT |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.5V @ 4mA, 2.5V @ 16mA |
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
| Power - Max: | - |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | Die |
| Other Names: | 917-EPC2100ENGRTR |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 475pF @ 15V, 1960pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 15V, 19nC @ 15V |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 40A (Ta) |
| Email: | [email protected] |
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| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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EPC2049ENGRT | EPC | TRANS GAN 40V BUMPED DIE | Inquiry |
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EPC2101ENG | EPC | TRANS GAN 2N-CH 60V BUMPED DIE | Inquiry |
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