Toshiba Electronic Component and Storage Device Co., Ltd. ("Toshiba") announced today that the industry's first [1] 2200V dual-carbonized silicon (SIC) MOSFET module --- "MG250YD2YMS3".The new module uses Toshiba's 3rd generation SIC MOSFET chip. Its drain current (DC) rated value is 250A. It is suitable for the application of DC 1500V for photovoltaic power generation systems and energy storage systems.The product has begun to support batch shipments today.

The above -mentioned industrial applications usually use DC 1000V or lower power, and their power devices are mostly 1200V or 1700V products.However, DC 1500V is expected to be widely used in the next few years, so Toshiba released the industry's first 2200V products.

MG250yD2YMS3 has a low leakage-source lead voltage (sensor) of low leakage-source rod (sensor) of low-guide losses and 0.7V (typical values) [2].In addition, it also has low opening and off -cut losses, which are 14MJ (typical values) [3] and 11mj (typical values) [3]. Compared with the typical silicon (SI) IGBT, it is about 90%[ 4].These characteristics help improve equipment efficiency.Because the MG250YD2YMS3 can achieve lower switching loss, users can use a small number of flat circuits with a small number of modules to replace the traditional three -level circuit, which helps miniaturize the device.

Toshiba will continue to innovate and continue to meet the market's demand for high efficiency and miniaturization of industrial equipment.

application:

Industrial equipment

-The renewable energy power generation system (photovoltaic power generation system, etc.)

-Energy storage system

-Che industrial equipment control equipment

-The high-frequency DC-DC converter and other devices

characteristic:

-The low leakage pole-source pole direction voltage (sensor):

VDS (on) Sense = 0.7V (typical value) (ID = 250A, VGS = + 20V, TCH = 25 ℃)

-An low -opening loss:

EON = 14MJ (typical value) (VDD = 1100V, ID = 250A, TCH = 150 ° C)

-The low -level disconnection loss:

EOFF = 11MJ (typical value) (VDD = 1100V, ID = 250A, TCH = 150 ° C)

-The low parasitic inductance:

Lspn = 12nh (typical value)