EPC2103ENG
EPC2103ENG
Part Number:
EPC2103ENG
Manufacturer:
EPC
Description:
TRANS GAN 2N-CH 80V BUMPED DIE
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
53909 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
EPC2103ENG.pdf

Introduction

ROGER-TECH is the stocking distributor for EPC2103ENG, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2103ENG by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-EPC2103ENG
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:2.5V @ 7mA
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:5.5 mOhm @ 20A, 5V
Power - Max:-
Packaging:Tray
Package / Case:Die
Other Names:917-EPC2103ENG
EPC2103ENGRH7
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:760pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 5V
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):80V
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:23A
Email:[email protected]

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