EPC2100ENG
EPC2100ENG
Part Number:
EPC2100ENG
Manufacturer:
EPC
Description:
TRANS GAN 2N-CH 30V BUMPED DIE
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
39905 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
EPC2100ENG.pdf

Introduction

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Specifications

Internal Part Number RO-EPC2100ENG
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Power - Max:-
Packaging:Tray
Package / Case:Die
Other Names:917-EPC2100ENG
EPC2100ENGR_H1
EPC2100ENGRH1
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
Email:[email protected]

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