EPC2016C
EPC2016C
Part Number:
EPC2016C
Manufacturer:
EPC
Description:
TRANS GAN 100V 18A BUMPED DIE
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
71327 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
EPC2016C.pdf

Introduction

ROGER-TECH is the stocking distributor for EPC2016C, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2016C by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-EPC2016C
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:2.5V @ 3mA
Vgs (Max):+6V, -4V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:16 mOhm @ 11A, 5V
Power Dissipation (Max):-
Packaging:Tape & Reel (TR)
Package / Case:Die
Other Names:917-1080-2
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:420pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 18A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Email:[email protected]

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