ROGER-TECH is the stocking distributor for EPC2012, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2012 by email, we will give you a best price according your plan.
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EPC2012
- Part Number:
- EPC2012
- Manufacturer:
- EPC
- Description:
- TRANS GAN 200V 3A BUMPED DIE
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 31089 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- EPC2012.pdf
Introduction
Specifications
| Internal Part Number | RO-EPC2012 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Vgs (Max): | +6V, -5V |
| Technology: | GaNFET (Gallium Nitride) |
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 3A, 5V |
| Power Dissipation (Max): | - |
| Packaging: | Original-Reel® |
| Package / Case: | Die |
| Other Names: | 917-1017-6 |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 145pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Drain to Source Voltage (Vdss): | 200V |
| Detailed Description: | N-Channel 200V 3A (Ta) Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Email: | [email protected] |
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