SI3812DV-T1-GE3
SI3812DV-T1-GE3
型號:
SI3812DV-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 20V 2A 6-TSOP
RoHS狀態:
無鉛/符合RoHS
庫存數量:
46321 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI3812DV-T1-GE3.pdf

簡單介紹

We can supply SI3812DV-T1-GE3, use the request quote form to request SI3812DV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3812DV-T1-GE3.The price and lead time for SI3812DV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3812DV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI3812DV-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:600mV @ 250µA (Min)
Vgs(最大):±12V
技術:MOSFET (Metal Oxide)
供應商設備封裝:6-TSOP
系列:LITTLE FOOT®
RDS(ON)(最大值)@標識,柵極電壓:125 mOhm @ 2.4A, 4.5V
功率耗散(最大):830mW (Ta)
封装:Tape & Reel (TR)
封裝/箱體:SOT-23-6 Thin, TSOT-23-6
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
柵極電荷(Qg)(Max)@ Vgs:4nC @ 4.5V
FET型:N-Channel
FET特點:Schottky Diode (Isolated)
驅動電壓(最大Rds開,最小Rds開):2.5V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:N-Channel 20V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP
電流 - 25°C連續排水(Id):2A (Ta)
Email:[email protected]

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