MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1
型號:
MB85R4M2TFN-G-ASE1
製造商:
Fujitsu Electronics America, Inc.
描述:
IC FRAM 4M PARALLEL 44TSOP
RoHS狀態:
無鉛/符合RoHS
庫存數量:
78066 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
1.MB85R4M2TFN-G-ASE1.pdf2.MB85R4M2TFN-G-ASE1.pdf

簡單介紹

We can supply MB85R4M2TFN-G-ASE1, use the request quote form to request MB85R4M2TFN-G-ASE1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MB85R4M2TFN-G-ASE1.The price and lead time for MB85R4M2TFN-G-ASE1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MB85R4M2TFN-G-ASE1.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-MB85R4M2TFN-G-ASE1
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
寫週期時間 - 字,頁:150ns
電壓 - 電源:1.8 V ~ 3.6 V
技術:FRAM (Ferroelectric RAM)
供應商設備封裝:44-TSOP
系列:-
封装:Tray
封裝/箱體:44-TSOP (0.400", 10.16mm Width)
其他名稱:865-1266
865-1266-1
865-1266-1-ND
工作溫度:-40°C ~ 85°C (TA)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
內存類型:Non-Volatile
內存大小:4Mb (256K x 16)
內存接口:Parallel
內存格式:FRAM
製造商標準交貨期:20 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
詳細說明:FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) Parallel 150ns 44-TSOP
訪問時間:150ns
Email:[email protected]

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