Nomor Bagian Internal | RO-EPC2012C |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | +6V, -4V |
Teknologi: | GaNFET (Gallium Nitride) |
Paket Perangkat pemasok: | Die Outline (4-Solder Bar) |
Seri: | eGaN® |
Rds Pada (Max) @ Id, Vgs: | 100 mOhm @ 3A, 5V |
Power Disipasi (Max): | - |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | Die |
Nama lain: | 917-1084-2 |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 12 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 140pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 5V |
Tiriskan untuk Sumber Tegangan (Vdss): | 200V |
Detil Deskripsi: | N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar) |
Current - Continuous Drain (Id) @ 25 ° C: | 5A (Ta) |
Email: | [email protected] |