IMD23T108
Artikelnummer:
IMD23T108
Hersteller:
LAPIS Semiconductor
Beschreibung:
TRANS PREBIAS NPN/PNP 50V SC74
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
65762 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IMD23T108.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IMD23T108
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 50mA, 2.5mA, 300mV @ 10mA, 500µA
Transistor-Typ:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device-Gehäuse:SMT6
Serie:-
Widerstand - Emitterbasis (R2):10 kOhms, 10 kOhms
Widerstand - Basis (R1):1 kOhms, 10 kOhms
Leistung - max:300mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-74, SOT-457
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:200MHz, 250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 200MHz, 250MHz 300mW Surface Mount SMT6
DC Stromgewinn (HFE) (Min) @ Ic, VCE:56 @ 50mA, 5V, 30 @ 5mA, 5V
Strom - Collector Cutoff (Max):-
Strom - Kollektor (Ic) (max):100mA, 500mA
Email:[email protected]

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