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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-bipolare (BJT)-Arrays, Pre-biased > IMD1AT108
IMD1AT108
IMD1AT108
Artikelnummer:
IMD1AT108
Hersteller:
LAPIS Semiconductor
Beschreibung:
TRANS NPN/PNP PREBIAS 0.3W SMT6
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
86184 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IMD1AT108.pdf
Anfrage

Einführung

We can supply IMD1AT108, use the request quote form to request IMD1AT108 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IMD1AT108.The price and lead time for IMD1AT108 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IMD1AT108.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IMD1AT108
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Transistor-Typ:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device-Gehäuse:SMT6
Serie:-
Widerstand - Emitterbasis (R2):-
Widerstand - Basis (R1):22 kOhms
Leistung - max:300mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-74, SOT-457
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 1mA, 5V
Strom - Collector Cutoff (Max):-
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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