DDTB123EC-7-F
DDTB123EC-7-F
Artikelnummer:
DDTB123EC-7-F
Hersteller:
Diodes Incorporated
Beschreibung:
TRANS PREBIAS PNP 200MW SOT23-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
79159 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
DDTB123EC-7-F.pdf

Einführung

We can supply DDTB123EC-7-F, use the request quote form to request DDTB123EC-7-F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DDTB123EC-7-F.The price and lead time for DDTB123EC-7-F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DDTB123EC-7-F.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-DDTB123EC-7-F
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Transistor-Typ:PNP - Pre-Biased
Supplier Device-Gehäuse:SOT-23-3
Serie:-
Widerstand - Emitterbasis (R2):2.2 kOhms
Widerstand - Basis (R1):2.2 kOhms
Leistung - max:200mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Andere Namen:DDTB123EC-7-FDICT
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:200MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SOT-23-3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:39 @ 50mA, 5V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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