DDTB123EC-7-F
DDTB123EC-7-F
Osa numero:
DDTB123EC-7-F
Valmistaja:
Diodes Incorporated
Kuvaus:
TRANS PREBIAS PNP 200MW SOT23-3
RoHS-tila:
Lyijytön / RoHS -yhteensopiva
Määrä varastossa:
79159 Pieces
Toimitusaika:
1-2 days (We have stocks to ship now)
Tuotantoaika:
4-8 weeks
Tietolomake:
DDTB123EC-7-F.pdf

esittely

We can supply DDTB123EC-7-F, use the request quote form to request DDTB123EC-7-F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DDTB123EC-7-F.The price and lead time for DDTB123EC-7-F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DDTB123EC-7-F.We look forward to working with you to establish long-term relations of cooperation

tekniset tiedot

Sisäinen osanumero RO-DDTB123EC-7-F
Kunto Original New
Maa alkuperä Contact us
Alkuun Merkintä email us
Korvaus See datasheet
Jännite - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
transistori tyyppi:PNP - Pre-Biased
Toimittaja Device Package:SOT-23-3
Sarja:-
Vastus - emitteripohja (R2):2.2 kOhms
Vastus - pohja (R1):2.2 kOhms
Virta - Max:200mW
Pakkaus:Cut Tape (CT)
Pakkaus / Case:TO-236-3, SC-59, SOT-23-3
Muut nimet:DDTB123EC-7-FDICT
Asennustyyppi:Surface Mount
Kosteuden herkkyys (MSL):1 (Unlimited)
Lyijytön tila / RoHS-tila:Lead free / RoHS Compliant
Taajuus - Siirtyminen:200MHz
Yksityiskohtainen kuvaus:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SOT-23-3
DC Nykyinen Gain (hFE) (Min) @ Ic, Vce:39 @ 50mA, 5V
Nykyinen - Collector Cutoff (Max):500nA
Nykyinen - Collector (le) (Max):500mA
Email:[email protected]

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