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Home > News > TOSHIBA launches discrete IGBTs that help reduce power consumption and radiation of household appliances: GT30J110SRA

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TOSHIBA launches discrete IGBTs that help reduce power consumption and radiation of household appliances: GT30J110SRA

  • Author:TOSHIBA
  • Release on:2021-01-18

Toshiba Electronic Components and Storage Co., Ltd. (hereinafter referred to as "Toshiba") has newly launched a 1100V discrete IGBT-GT30J110SRA, which is suitable for IH rice cookers and household appliances such as microwave ovens that use AC 100V input voltage resonance circuit.

The characteristics of the new GT30J110SRA product have been greatly improved. With existing products【1】In comparison, its loss, short-circuit current suppression, electromagnetic radiation are lower, and the safe working area is wider.

By reducing the turn-off switch and diode conduction losses, lower losses can be achieved. By reducing the radiation noise, it is possible to use a smaller gate drive resistor than in the past. Typical opening time【2】0.2μs, compared with existing products【1】Reduced by about 20%, typical off time【2】It is 0.33μs, which is about 29% less than existing products. Typical forward voltage of diode【3】It is 1.40V, which is reduced by about 33%, greatly reducing equipment power consumption.

Short-circuit current suppression is achieved by reducing the saturation current, which can reduce the short-circuit current of the resonant capacitor during device startup. The typical peak saturation current of the new product is 200A, which is higher than that of the existing product【1】Reduced by about 40%, at 60A or lower, the collector-emitter saturation voltage is equal to the existing product【1】.

With existing products【1】In comparison, the high-pressure side of its safe use area is enlarged, making the product less likely to be damaged.

By optimizing the chip structure, lower electromagnetic radiation is achieved【4】. When the chip is around 30MHz where the electromagnetic radiation level is the strongest, the radiation emission is only 35.8dBμV/m, which is about 10dBμV/m lower than existing products.【5】.

[1] Existing product GT60PR21
[2] @VCE＝600V, VIC= 60A, VGE= +15V, Ta＝25°C
[3] @IF= 30A, VGE=0V, Ta＝25°C
[4] Toshiba's measured value
[5] Existing product GT40QR21

characteristic

  • 6.5 generation
  • RC structure built-in diode
  • Low diode forward voltage: VF＝1.40V (typical value) @IF= 30A, Ta＝25°C

application

Voltage resonance of household appliances

  • IH rice cooker
  • IH induction cooker
  • Microwave, etc.

Product specifications

(Unless otherwise specified, @Ta＝25℃)

Device model Package Absolute maximum rating collector-
Emitter
Saturation voltage
VCE (sat)Typical value (V)		 diode
Forward Voltage
VFTypical value (V)		 Switching time
(Fall time)
tfTypical value (µs)		 Thermal resistance of junction
Rth(j-c)Maximum (°C/W)
collector
-Emitter
Voltage
VCES(V)		 Collector current (DC) IC(A) Junction temperature
Tj(°C)
@Tc＝25°C
 @Tc＝100°C
 @IC= 30A,
VGE＝15V		 @IF= 30A,
VGE=0V
GT30J110SRA TO-3P (N) 1100 60 30 175 1.60 1.40 0.17 0.48

Internal circuit

The illustration of internal circuit of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.

Application circuit example

The illustration of application circuit example of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.

The application circuit shown in this article is for reference only.
A thorough evaluation is required, especially in the mass production design phase.
The provision of these application circuit examples does not mean that any industrial property license is granted.

Characteristic curve

The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • New diode forward voltage【3】The typical value at 25°C and 30A is 1.40V, which is better than existing products【1】Reduced by about 33%, thus helping to reduce the power consumption of the device.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • Compared with the existing products, the new product has changed the chip design to reduce the capacitor short-circuit current due to voltage resonance during startup【1】. When TC= 25°C and VGE =15V, the collector current is suppressed to 150A to 200A. In the case of 60A or lower, the collector-emitter saturation voltage is equal to the existing product【1】The voltage.
  • Compared with existing products, the new product has more balanced performance and a larger gate resistance range【1】.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • With existing similar products【5】In comparison, the new product has the highest electromagnetic radiation intensity around 30MHz, and the radiation level is reduced by about 10dBμV/m.

The product prices and specifications, service content and contact information in this document are still the latest information on the day of the announcement, and are subject to change without notice.