RN1413(TE85L,F)
Part Number:
RN1413(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 0.2W SMINI
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
87757 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
RN1413(TE85L,F).pdf

Introduction

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Specifications

Internal Part Number RO-RN1413(TE85L,F)
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:S-Mini
Series:-
Resistor - Base (R1):47 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:RN1413(TE85LF)TR
RN1413TE85,F
RN1413TE85F
RN1413TE85F-ND
RN1413TE85FTR
RN1413TE85FTR-ND
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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