SI4931DY-T1-GE3
型號:
SI4931DY-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2P-CH 12V 6.7A 8SOIC
RoHS狀態:
無鉛/符合RoHS
庫存數量:
46678 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI4931DY-T1-GE3.pdf

簡單介紹

We can supply SI4931DY-T1-GE3, use the request quote form to request SI4931DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4931DY-T1-GE3.The price and lead time for SI4931DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4931DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI4931DY-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:1V @ 350µA
供應商設備封裝:8-SO
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:18 mOhm @ 8.9A, 4.5V
功率 - 最大:1.1W
封装:Tape & Reel (TR)
封裝/箱體:8-SOIC (0.154", 3.90mm Width)
其他名稱:SI4931DY-T1-GE3TR
SI4931DYT1GE3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:33 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:-
柵極電荷(Qg)(Max)@ Vgs:52nC @ 4.5V
FET型:2 P-Channel (Dual)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):12V
詳細說明:Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO
電流 - 25°C連續排水(Id):6.7A
基礎部件號:SI4931
Email:[email protected]

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