SI4931DY-T1-GE3
Nomor bagian:
SI4931DY-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET 2P-CH 12V 6.7A 8SOIC
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
46678 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SI4931DY-T1-GE3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SI4931DY-T1-GE3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:1V @ 350µA
Paket Perangkat pemasok:8-SO
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:18 mOhm @ 8.9A, 4.5V
Listrik - Max:1.1W
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Nama lain:SI4931DY-T1-GE3TR
SI4931DYT1GE3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:-
Gate Charge (Qg) (Max) @ Vgs:52nC @ 4.5V
FET Jenis:2 P-Channel (Dual)
Fitur FET:Logic Level Gate
Tiriskan untuk Sumber Tegangan (Vdss):12V
Detil Deskripsi:Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:6.7A
Nomor Bagian Dasar:SI4931
Email:[email protected]

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