SI4943CDY-T1-E3
Onderdeel nummer:
SI4943CDY-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET 2P-CH 20V 8A 8-SOIC
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
33851 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SI4943CDY-T1-E3.pdf

Invoering

We can supply SI4943CDY-T1-E3, use the request quote form to request SI4943CDY-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4943CDY-T1-E3.The price and lead time for SI4943CDY-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4943CDY-T1-E3.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-SI4943CDY-T1-E3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:3V @ 250µA
Leverancier Device Pakket:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:19.2 mOhm @ 8.3A, 10V
Vermogen - Max:3.1W
Packaging:Tape & Reel (TR)
Verpakking / doos:8-SOIC (0.154", 3.90mm Width)
Andere namen:SI4943CDY-T1-E3-ND
SI4943CDY-T1-E3TR
Temperatuur:-50°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:62nC @ 10V
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:8A
Base Part Number:SI4943
Email:[email protected]

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