Intern onderdeelnummer | RO-SI4946CDY-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 3V @ 250µA |
Leverancier Device Pakket: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 40.9 mOhm @ 5.2A, 10V |
Vermogen - Max: | 2W (Ta), 2.8W (Tc) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
Andere namen: | SI4946CDY-T1-GE3CT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain naar de Bron Voltage (Vdss): | 60V |
gedetailleerde beschrijving: | Mosfet Array 2 N-Channel (Dual) 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 5.2A (Ta), 6.1A (Tc) |
Email: | [email protected] |