Intern onderdeelnummer | RO-SI4943BDY-T1-E3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 3V @ 250µA |
Leverancier Device Pakket: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 19 mOhm @ 8.4A, 10V |
Vermogen - Max: | 1.1W |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
Andere namen: | SI4943BDY-T1-E3TR SI4943BDYT1E3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 33 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | Mosfet Array 2 P-Channel (Dual) 20V 6.3A 1.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 6.3A |
Base Part Number: | SI4943 |
Email: | [email protected] |