Intern onderdeelnummer | RO-PHU11NQ10T,127 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | I-PAK |
Serie: | TrenchMOS™ |
Rds On (Max) @ Id, VGS: | 180 mOhm @ 9A, 10V |
Vermogensverlies (Max): | 57.7W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Short Leads, IPak, TO-251AA |
Andere namen: | 934056349127 PHU11NQ10T PHU11NQ10T-ND |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 14.7nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 100V |
gedetailleerde beschrijving: | N-Channel 100V 10.9A (Tc) 57.7W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25 ° C: | 10.9A (Tc) |
Email: | [email protected] |