Nomor Bagian Internal | RO-PHU11NQ10T,127 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | I-PAK |
Seri: | TrenchMOS™ |
Rds Pada (Max) @ Id, Vgs: | 180 mOhm @ 9A, 10V |
Power Disipasi (Max): | 57.7W (Tc) |
Pengemasan: | Tube |
Paket / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Nama lain: | 934056349127 PHU11NQ10T PHU11NQ10T-ND |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 360pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 14.7nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 100V |
Detil Deskripsi: | N-Channel 100V 10.9A (Tc) 57.7W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25 ° C: | 10.9A (Tc) |
Email: | [email protected] |