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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFT150N17T2
IXFT150N17T2
Artikelnummer:
IXFT150N17T2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH
Menge auf Lager:
32799 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFT150N17T2.pdf
Anfrage

Einführung

We can supply IXFT150N17T2, use the request quote form to request IXFT150N17T2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFT150N17T2.The price and lead time for IXFT150N17T2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFT150N17T2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFT150N17T2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-268
Serie:HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs:12 mOhm @ 75A, 10V
Verlustleistung (max):880W (Tc)
Verpackung / Gehäuse:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:24 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:14600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:233nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):175V
detaillierte Beschreibung:N-Channel 175V 150A (Tc) 880W (Tc) Surface Mount TO-268
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:150A (Tc)
Email:[email protected]

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