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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-IGBTs-Einzel > APT65GP60L2DQ2G
APT65GP60L2DQ2G
APT65GP60L2DQ2G
Artikelnummer:
APT65GP60L2DQ2G
Hersteller:
Microsemi
Beschreibung:
IGBT 600V 198A 833W TO264
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
82217 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
APT65GP60L2DQ2G.pdf
Anfrage

Einführung

We can supply APT65GP60L2DQ2G, use the request quote form to request APT65GP60L2DQ2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT65GP60L2DQ2G.The price and lead time for APT65GP60L2DQ2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT65GP60L2DQ2G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-APT65GP60L2DQ2G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:2.7V @ 15V, 65A
Testbedingung:400V, 65A, 5 Ohm, 15V
Td (ein / aus) bei 25 ° C:30ns/90ns
Schaltenergie:605µJ (on), 895µJ (off)
Serie:POWER MOS 7®
Leistung - max:833W
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Andere Namen:APT65GP60L2DQ2GMI
APT65GP60L2DQ2GMI-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:PT
Gate-Ladung:210nC
detaillierte Beschreibung:IGBT PT 600V 198A 833W Through Hole
Strom - Collector Pulsed (Icm):250A
Strom - Kollektor (Ic) (max):198A
Email:[email protected]

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