APT64GA90B2D30
APT64GA90B2D30
Artikelnummer:
APT64GA90B2D30
Hersteller:
Microsemi
Beschreibung:
IGBT 900V 117A 500W TO-247
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
51968 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
APT64GA90B2D30.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-APT64GA90B2D30
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):900V
VCE (on) (Max) @ Vge, Ic:3.1V @ 15V, 38A
Testbedingung:600V, 38A, 4.7 Ohm, 15V
Td (ein / aus) bei 25 ° C:18ns/131ns
Schaltenergie:1192µJ (on), 1088µJ (off)
Serie:POWER MOS 8™
Leistung - max:500W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3 Variant
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:29 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:PT
Gate-Ladung:162nC
detaillierte Beschreibung:IGBT PT 900V 117A 500W Through Hole
Strom - Collector Pulsed (Icm):193A
Strom - Kollektor (Ic) (max):117A
Email:[email protected]

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