SI7621DN-T1-GE3
SI7621DN-T1-GE3
Part Number:
SI7621DN-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 20V 4A 1212-8 PPAK
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
71880 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
SI7621DN-T1-GE3.pdf

Introduction

ROGER-TECH is the stocking distributor for SI7621DN-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI7621DN-T1-GE3 by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-SI7621DN-T1-GE3
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:90 mOhm @ 3.9A, 4.5V
Power Dissipation (Max):3.1W (Ta), 12.5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SI7621DN-T1-GE3TR
SI7621DNT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 4A (Tc) 3.1W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Email:[email protected]

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