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SI7613DN-T1-GE3
- Part Number:
- SI7613DN-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET P-CH 20V 35A 1212-8 PPAK
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 35100 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SI7613DN-T1-GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SI7613DN-T1-GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Vgs (Max): | ±16V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 17A, 10V |
| Power Dissipation (Max): | 3.8W (Ta), 52.1W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | PowerPAK® 1212-8 |
| Other Names: | SI7613DN-T1-GE3TR SI7613DNT1GE3 |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 32 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 2620pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | P-Channel 20V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8 |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Email: | [email protected] |
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