ROGER-TECH is the stocking distributor for IXFX20N120P, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IXFX20N120P by email, we will give you a best price according your plan.
Buy IXFX20N120P with BYCHPS
Buy with guarantee
IXFX20N120P
- Part Number:
- IXFX20N120P
- Manufacturer:
- IXYS Corporation
- Description:
- MOSFET N-CH 1200V 20A PLUS247
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 32211 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- IXFX20N120P.pdf
Introduction
Specifications
| Internal Part Number | RO-IXFX20N120P |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Test: | 11100pF @ 25V |
| Voltage - Breakdown: | PLUS247™-3 |
| Vgs(th) (Max) @ Id: | 570 mOhm @ 10A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | HiPerFET™, PolarP2™ |
| RoHS Status: | Tube |
| Rds On (Max) @ Id, Vgs: | 20A (Tc) |
| Polarization: | TO-247-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 8 Weeks |
| Manufacturer Part Number: | IXFX20N120P |
| Input Capacitance (Ciss) (Max) @ Vds: | 193nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.5V @ 1mA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 1200V (1.2kV) 20A (Tc) 780W (Tc) Through Hole PLUS247™-3 |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 1200V 20A PLUS247 |
| Current - Continuous Drain (Id) @ 25°C: | 1200V (1.2kV) |
| Capacitance Ratio: | 780W (Tc) |
| Email: | [email protected] |
Related parts for IXFX20N120P
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IXFX170N20P | IXYS Corporation | MOSFET N-CH 200V 170A PLUS247 | Inquiry |
|
IXFX180N15P | IXYS Corporation | MOSFET N-CH 150V 180A PLUS 247 | Inquiry |
|
IXFX170N20T | IXYS Corporation | MOSFET N-CH 200V 170A PLUS247 | Inquiry |
|
IXFX180N085 | IXYS Corporation | MOSFET N-CH 85V 180A PLUS247 | Inquiry |
|
IXFX21N100F | IXYS RF | MOSFET N-CH 1000V 21A PLUS247-3 | Inquiry |
|
IXFX210N17T | IXYS Corporation | MOSFET N-CH 170V 210A PLUS247 | Inquiry |
|
IXFX180N07 | IXYS Corporation | MOSFET N-CH 70V 180A PLUS247 | Inquiry |
 |
IXFX240N25X3 | IXYS Corporation | MOSFET N-CH 250V 240A PLUS247-3 | Inquiry |
|
IXFX200N10P | IXYS Corporation | MOSFET N-CH 100V 200A PLUS247 | Inquiry |
|
IXFX21N100Q | IXYS Corporation | MOSFET N-CH 1000V 21A PLUS 247 | Inquiry |
|
IXFX160N30T | IXYS Corporation | MOSFET N-CH 300V 160A PLUS247 | Inquiry |
|
IXFX24N100 | IXYS Corporation | MOSFET N-CH 1000V 24A PLUS 247 | Inquiry |
|
IXFX20N120 | IXYS Corporation | MOSFET N-CH 1200V 20A ISOPLUS247 | Inquiry |
 |
IXFX20N80Q | IXYS Corporation | MOSFET N-CH 800V 20A PLUS247-3 | Inquiry |
|
IXFX230N20T | IXYS Corporation | MOSFET N-CH 200V 230A PLUS247 | Inquiry |
|
IXFX210N30X3 | IXYS Corporation | 300V/210A ULTRA JUNCTION X3-CLAS | Inquiry |
|
IXFX180N25T | IXYS Corporation | MOSFET N-CH 250V 180A PLUS247 | Inquiry |
|
IXFX180N10 | IXYS Corporation | MOSFET N-CH 100V 180A PLUS247 | Inquiry |
|
IXFX220N17T2 | IXYS Corporation | MOSFET N-CH 170V 220A PLUS247 | Inquiry |
|
IXFX240N15T2 | IXYS Corporation | MOSFET N-CH 150V 240A PLUS247 | Inquiry |
Latest News
- Toshiba launches SmartMCD series gate driver IC with embedded microcontroller
- ADI deployment Sambanova kit, promoting the production formula AI to achieve breakthrough at an enterprise level
- Honeywell and ADI joined hands to promote the innovation and change of building automation
- MAXIM announced the launch
- MAXIM launches a car DC-DC converter MAX16984, a car with integrated USB charging enumers
- RENESAS Electronics launches the industry's first programmable electrical driver IC
- Renesas launched the first generation of 32-bit RISC-V CPU kernel
- Vishay launched the new 10 MBD low -power light coupling, as low as 5 mA, the voltage range is 2.7 V to 5.5 V
- Melexis launched a new intelligent divert solution to integrate reliable security
- Toshiba has developed the industry's first 2200V dual -carbide MOSFET module to help the efficient and miniaturization of industrial equipment
- The DDR5 era is approaching, and new challenges cannot be ignored
- RENESAS opens the next -generation car SOC and MCU processor product route map