SI6963BDQ-T1-GE3
SI6963BDQ-T1-GE3
型號:
SI6963BDQ-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2P-CH 20V 3.4A 8-TSSOP
RoHS狀態:
無鉛/符合RoHS
庫存數量:
45415 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI6963BDQ-T1-GE3.pdf

簡單介紹

We can supply SI6963BDQ-T1-GE3, use the request quote form to request SI6963BDQ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI6963BDQ-T1-GE3.The price and lead time for SI6963BDQ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI6963BDQ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI6963BDQ-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:1.4V @ 250µA
供應商設備封裝:8-TSSOP
系列:-
RDS(ON)(最大值)@標識,柵極電壓:45 mOhm @ 3.9A, 4.5V
功率 - 最大:830mW
封装:Cut Tape (CT)
封裝/箱體:8-TSSOP (0.173", 4.40mm Width)
其他名稱:SI6963BDQ-T1-GE3CT
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:-
柵極電荷(Qg)(Max)@ Vgs:11nC @ 4.5V
FET型:2 P-Channel (Dual)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):20V
詳細說明:Mosfet Array 2 P-Channel (Dual) 20V 3.4A 830mW Surface Mount 8-TSSOP
電流 - 25°C連續排水(Id):3.4A
基礎部件號:SI6963
Email:[email protected]

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