Intern onderdeelnummer | RO-EPC2012CENGR |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
Voltage - Test: | 100pF @ 100V |
Voltage - Breakdown: | Die Outline (4-Solder Bar) |
VGS (th) (Max) @ Id: | 100 mOhm @ 3A, 5V |
Technologie: | GaNFET (Gallium Nitride) |
Serie: | eGaN® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, VGS: | 5A (Ta) |
Polarisatie: | Die |
Andere namen: | 917-EPC2012CENGRTR |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | EPC2012CENGR |
Input Capacitance (Ciss) (Max) @ Vds: | 1nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 1mA |
FET Feature: | N-Channel |
Uitgebreide beschrijving: | N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar) |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | TRANS GAN 200V 5A BUMPED DIE |
Current - Continuous Drain (Id) @ 25 ° C: | 200V |
capacitieve Ratio: | - |
Email: | [email protected] |