Toshiba Electronic Component and Storage Device Co., Ltd. ("Toshiba") announced today that the launch of a 4-pin TO-247-4L (X) packaging of 4 pins that help reduce switching loss (SIC) MOSFET- "TWXXXZXXXC series "This product uses Toshiba's latest [1] 3rd generation silicon carbide MOSFET chip to support industrial equipment applications.The five rated voltage in this series is 650V, and the other five rated voltage are 1200V. Ten products have begun to ship in batches today.

The new product is the first batch of products in Toshiba silicon carbide MOSFET product line to use 4 pins to-247-4L (X) packaging. Its packaging supports the grid drive signal source to the extreme use of the Kelvin connection, which will help reduce the endogenous lines of the packaging endogenous line The influence of inductances, thereby improving high -speed switching performance.Compared with Toshiba's current 3-pin TO-247 product TW045N120C, the opening loss of the new TW045Z120C has been reduced by about 40%, and the negative loss is reduced by about 34%[2].This improvement helps reduce equipment power loss.

The reference design of the 3 -phase inverter using SIC MOSFET has been released on Toshiba's official website.

Toshiba will continue to expand its own product line, further meet market trends, and help users improve equipment efficiency and expand power capacity.

Use the new SIC MOSFET 3 -phase inverter

Use SIC MOSFET's 3 -phase inverter

Simple Fragrance

application:

-Switzer power supply (server, data center, communication equipment, etc.)

-The electric vehicle charging station

-Helvo inverter

-Suctive power supply (UPS)

characteristic:

-4 pin to-247-4L (x) Packaging:

The grid drive signal source Extremely uses the Kelvin connection, which can reduce the switch loss

-An 3 -generation silicon carbide MOSFET

-The low -leakage source drive resistance × grid leakage charge

-The low diode forward voltage: VDSF = -1.35V (typical value) (VGS = -5V)