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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-bipolare (BJT)-Arrays > SG2003J-JAN
SG2003J-JAN
SG2003J-JAN
Artikelnummer:
SG2003J-JAN
Hersteller:
Microsemi
Beschreibung:
TRANS 7NPN DARL 50V 0.5A 16DIP
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
74021 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
SG2003J-JAN.pdf
Anfrage

Einführung

We can supply SG2003J-JAN, use the request quote form to request SG2003J-JAN pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SG2003J-JAN.The price and lead time for SG2003J-JAN depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SG2003J-JAN.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-SG2003J-JAN
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Transistor-Typ:7 NPN Darlington
Supplier Device-Gehäuse:16-CDIP
Serie:-
Leistung - max:-
Verpackung:Tube
Verpackung / Gehäuse:16-CDIP (0.300", 7.62mm)
Andere Namen:1259-1082
1259-1082-MIL
M38510/14103BEA
Q9387418
SG2003JJAN
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-CDIP
DC Stromgewinn (HFE) (Min) @ Ic, VCE:1000 @ 350mA, 2V
Strom - Collector Cutoff (Max):-
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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