IXFN64N60P
IXFN64N60P
Artikelnummer:
IXFN64N60P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 600V 50A SOT-227
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
83125 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFN64N60P.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IXFN64N60P
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 8mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-227B
Serie:PolarHV™
Rds On (Max) @ Id, Vgs:96 mOhm @ 500mA, 10V
Verlustleistung (max):700W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:SOT-227-4, miniBLOC
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:12000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 50A (Tc) 700W (Tc) Chassis Mount SOT-227B
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:50A (Tc)
Email:[email protected]

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