Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - IGBT - Single > APT64GA90B2D30
APT64GA90B2D30
APT64GA90B2D30
Modèle de produit:
APT64GA90B2D30
Fabricant:
Microsemi
La description:
IGBT 900V 117A 500W TO-247
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
51968 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
APT64GA90B2D30.pdf
Enquête

introduction

We can supply APT64GA90B2D30, use the request quote form to request APT64GA90B2D30 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT64GA90B2D30.The price and lead time for APT64GA90B2D30 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT64GA90B2D30.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-APT64GA90B2D30
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Collecteur-émetteur disruptif (Max):900V
Vce (sur) (Max) @ Vge, Ic:3.1V @ 15V, 38A
Condition de test:600V, 38A, 4.7 Ohm, 15V
Td (marche / arrêt) à 25 ° C:18ns/131ns
énergie de commutation:1192µJ (on), 1088µJ (off)
Séries:POWER MOS 8™
Puissance - Max:500W
Emballage:Tube
Package / Boîte:TO-247-3 Variant
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:29 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type d'entrée:Standard
type de IGBT:PT
gate charge:162nC
Description détaillée:IGBT PT 900V 117A 500W Through Hole
Courant - Collecteur pulsée (Icm):193A
Courant - Collecteur (Ic) (max):117A
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes APT64GA90B2D30

image Modèle de produit Fabricant La description Vue
APT65GP60L2DQ2G Image APT65GP60L2DQ2G Microsemi IGBT 600V 198A 833W TO264 Enquête
APT68GA60B2D40 Image APT68GA60B2D40 Microsemi IGBT 600V 121A 520W TO-247 Enquête
APT65GP60B2G Image APT65GP60B2G Microsemi IGBT 600V 100A 833W TMAX Enquête
APT66F60B2 Image APT66F60B2 Microsemi MOSFET N-CH 600V 70A TO-247 Enquête
APT65GP60J Image APT65GP60J Microsemi IGBT 600V 130A 431W SOT227 Enquête
APT60S20SG/TR Image APT60S20SG/TR Microsemi Corporation DIODE SCHOTTKY 200V 75A D3PAK Enquête
APT66F60L Image APT66F60L Microsemi MOSFET N-CH 600V 70A TO-264 Enquête
APT60M80L2VRG Image APT60M80L2VRG Microsemi MOSFET N-CH 600V 65A TO-264MAX Enquête
APT60S20SG Image APT60S20SG Microsemi Corporation DIODE SCHOTTKY 200V 75A D3 Enquête
APT66M60B2 Image APT66M60B2 Microsemi MOSFET N-CH 600V 66A T-MAX Enquête
APT60S20BG Image APT60S20BG Microsemi DIODE SCHOTTKY 200V 75A TO247 Enquête
APT60M80JVR Image APT60M80JVR Microsemi MOSFET N-CH 600V 55A SOT-227 Enquête
APT60N60SCSG/TR Image APT60N60SCSG/TR Microsemi MOSFET N-CH 600V 60A D3PAK Enquête
APT68GA60B Image APT68GA60B Microsemi IGBT 600V 121A 520W TO-247 Enquête
APT60S20B2CTG Image APT60S20B2CTG Microsemi DIODE ARRAY SCHOTTKY 200V TMAX Enquête
APT60N60BCSG Image APT60N60BCSG Microsemi MOSFET N-CH 600V 60A TO-247 Enquête
APT64GA90LD30 Image APT64GA90LD30 Microsemi IGBT 900V 117A 500W TO-264 Enquête
APT60N60SCSG Image APT60N60SCSG Microsemi MOSFET N-CH 600V 60A D3PAK Enquête
APT66M60L Image APT66M60L Microsemi MOSFET N-CH 600V 70A TO-264 Enquête
APT64GA90B Image APT64GA90B Microsemi IGBT 900V 117A 500W TO247 Enquête

Latest Nouvelles