W987D2HBJX6E
W987D2HBJX6E
Part Number:
W987D2HBJX6E
Manufacturer:
Winbond Electronics Corporation
Description:
IC DRAM 128M PARALLEL 90VFBGA
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
80695 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
W987D2HBJX6E.pdf

Introduction

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Specifications

Internal Part Number RO-W987D2HBJX6E
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Write Cycle Time - Word, Page:15ns
Voltage - Supply:1.7 V ~ 1.95 V
Technology:SDRAM - Mobile LPSDR
Supplier Device Package:90-VFBGA (8x13)
Series:-
Packaging:Tray
Package / Case:90-TFBGA
Operating Temperature:-25°C ~ 85°C (TC)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Volatile
Memory Size:128Mb (4M x 32)
Memory Interface:Parallel
Memory Format:DRAM
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 90-VFBGA (8x13)
Clock Frequency:166MHz
Access Time:5.4ns
Email:[email protected]

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