SIA433EDJ-T1-GE3
SIA433EDJ-T1-GE3
Part Number:
SIA433EDJ-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 20V 12A SC-70-6
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
40075 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
SIA433EDJ-T1-GE3.pdf

Introduction

ROGER-TECH is the stocking distributor for SIA433EDJ-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIA433EDJ-T1-GE3 by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-SIA433EDJ-T1-GE3
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:1.2V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SC-70-6 Single
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:18 mOhm @ 7.6A, 4.5V
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Packaging:Cut Tape (CT)
Package / Case:PowerPAK® SC-70-6
Other Names:SIA433EDJ-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:75nC @ 8V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Email:[email protected]

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