SIA421DJ-T1-GE3
SIA421DJ-T1-GE3
Part Number:
SIA421DJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 30V 12A SC70-6
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
63726 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
SIA421DJ-T1-GE3.pdf

Introduction

ROGER-TECH is the stocking distributor for SIA421DJ-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIA421DJ-T1-GE3 by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-SIA421DJ-T1-GE3
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Voltage - Test:950pF @ 15V
Voltage - Breakdown:PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id:35 mOhm @ 5.3A, 10V
Vgs (Max):4.5V, 10V
Technology:MOSFET (Metal Oxide)
Series:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:12A (Tc)
Polarization:PowerPAK® SC-70-6
Other Names:SIA421DJ-T1-GE3TR
SIA421DJT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SIA421DJ-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:29nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:3V @ 250µA
FET Feature:P-Channel
Expanded Description:P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Drain to Source Voltage (Vdss):-
Description:MOSFET P-CH 30V 12A SC70-6
Current - Continuous Drain (Id) @ 25°C:30V
Capacitance Ratio:3.5W (Ta), 19W (Tc)
Email:[email protected]

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