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SI8800EDB-T2-E1
- Part Number:
- SI8800EDB-T2-E1
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 20V MICROFOOT
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 72736 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SI8800EDB-T2-E1.pdf
Introduction
Specifications
| Internal Part Number | RO-SI8800EDB-T2-E1 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 4-Microfoot |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 1A, 4.5V |
| Power Dissipation (Max): | 500mW (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 4-XFBGA, CSPBGA |
| Other Names: | SI8800EDB-T2-E1TR SI8800EDBT2E1 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 46 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 8V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Email: | [email protected] |
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